N-channel silicon power MOSFET featuring 600V drain-source voltage and 1.5 ohm on-resistance. This single-element, metal-oxide semiconductor field-effect transistor operates within a temperature range of -40°C to 150°C. Packaged in a TO-252 (DPAK-3/2) with a single terminal position, it is designed for efficient power switching applications.
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Technical Specifications
Infineon IPD60R1K5CEAUMA1 technical specifications.
General
| Max Operating Temperature | 150 |
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD60R1K5CEAUMA1 Datasheet
Download the complete datasheet for Infineon IPD60R1K5CEAUMA1 to view detailed technical specifications.
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