This device is a 600 V CoolMOS P7 N-channel power MOSFET in the PG-TO 252-3 DPAK package. It is intended for hard- and soft-switching stages such as PFC, LLC, and PWM power converters. The transistor provides 12 A continuous drain current, 36 A pulsed drain current, typical 0.214 Ω drain-source on-state resistance, and typical 18 nC total gate charge. Rated operating and storage temperature range is -40 °C to 150 °C, and the datasheet cites ESD robustness above 2 kV HBM.
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| Drain-Source Breakdown Voltage | 600V |
| Continuous Drain Current | 12A |
| Pulsed Drain Current | 36A |
| Single Pulse Avalanche Energy | 38mJ |
| Power Dissipation | 53W |
| Operating Junction Temperature Min | -40°C |
| Operating Junction Temperature Max | 150°C |
| Thermal Resistance Junction-to-Case | 2.36°C/W |
| Thermal Resistance Junction-to-Ambient | 62°C/W |
| Gate Threshold Voltage | 3.5V |
| Drain-Source On-State Resistance | 0.214Ω |
| Input Capacitance | 761pF |
| Output Capacitance | 14pF |
| Turn-On Delay Time | 17ns |
| Rise Time | 9ns |
| Turn-Off Delay Time | 60ns |
| Fall Time | 9ns |
| Total Gate Charge | 18nC |
| Diode Forward Voltage | 0.9V |
| Reverse Recovery Time | 158ns |
| Reverse Recovery Charge | 1.1µC |
| Peak Reverse Recovery Current | 14.5A |
| RoHS | Yes |
| REACH | not_compliant |
| Military Spec | False |
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