N-Channel Power MOSFET, 600V Drain to Source Breakdown Voltage, 2.4A Continuous Drain Current, and 2 Ohm Rds On Max. This silicon, metal-oxide semiconductor FET features a 3V threshold voltage and 140pF input capacitance. Packaged in a TO-252-3 plastic package, it offers a maximum power dissipation of 22.3W and operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
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Infineon IPD60R2K0C6BTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 140pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 22.3W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 22.3W |
| Rds On Max | 2R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 7ns |
| Width | 6.22mm |
| RoHS | Compliant |
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