N-Channel Power MOSFET, 600V breakdown voltage, 10.6A continuous drain current, and 380mΩ on-state resistance. Features a TO-252 package for surface mounting, 83W power dissipation, and 150°C maximum operating temperature. Includes 700pF input capacitance, 9ns fall time, 15ns turn-on delay, and 110ns turn-off delay.
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Infineon IPD60R380C6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 340mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 9ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 700pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 380mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Turn-Off Delay Time | 110ns |
| Turn-On Delay Time | 15ns |
| Weight | 3.949996g |
| RoHS | Compliant |
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