The IPD60R380E6BTMA1 is a high-power N-CHANNEL MOSFET from Infineon, featuring a maximum drain to source voltage of 600V and a continuous drain current of 10.6A. It has a drain to source resistance of 380mR and an input capacitance of 700pF. The device operates over a temperature range of -55°C to 155°C and is packaged in a TO-252-3 surface mount package. It is part of the CoolMOS series and is not radiation hardened.
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Infineon IPD60R380E6BTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Resistance | 380mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Max Operating Temperature | 155°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| RoHS Compliant | No |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 56ns |
| Turn-On Delay Time | 11ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon IPD60R380E6BTMA1 to view detailed technical specifications.
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