N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 10.6A continuous drain current. Offers low on-state resistance of 380mΩ (342mΩ typical) and a threshold voltage of 4V. Designed for efficient switching with fast turn-on (12ns) and turn-off (33ns) delay times, and a 7ns fall time. Housed in a TO-252-3 package, this component supports a maximum power dissipation of 83W and operates within a temperature range of -55°C to 150°C.
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Infineon IPD60R380P6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 342mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 877pF |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 380mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Radiation Hardening | No |
| Rds On Max | 380mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ P6 |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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