N-Channel Power MOSFET, 600V DC Rated Voltage, 650V Drain to Source Breakdown Voltage, 9A Continuous Drain Current. Features 385mR Drain to Source Resistance (Rds On Max) and 83W Max Power Dissipation. Operates with a 3V Threshold Voltage and 20V Gate to Source Voltage. Packaged in a TO-252-3, this silicon, metal-oxide semiconductor FET offers fast switching with 10ns turn-on and 40ns turn-off delay times.
PackageTO-252-3
Voltage650V
Current11A
Current Rating9A
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Technical Specifications
Infineon IPD60R385CP technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Current | 11A |
| Current Rating | 9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 385mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 5ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 385mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
| Voltage | 650V |
| DC Rated Voltage | 600V |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R385CP Datasheet
Download the complete datasheet for Infineon IPD60R385CP to view detailed technical specifications.
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