The IPD60R385CPBTMA1 is a 600V 9A power MOSFET available in a TO-252-3 package, suitable for surface mount applications. It operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The device has a maximum power dissipation of 83W and a maximum dual supply voltage of 600V.
PackageTO-252-3
MountingSurface Mount
Power83W
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Technical Specifications
Infineon IPD60R385CPBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 790pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 83W |
| Rds On Max | 385mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R385CPBTMA1 Datasheet
Download the complete datasheet for Infineon IPD60R385CPBTMA1 to view detailed technical specifications.
No datasheet is available for this part.