N-channel power MOSFET featuring 650V drain-to-source breakdown voltage and 3.3 Ohm on-state resistance. This silicon, metal-oxide semiconductor FET offers a continuous drain current of 1.7A and a maximum power dissipation of 18.1W. Packaged in a TO-252-3 plastic housing, it operates within a temperature range of -55°C to 150°C and includes fast switching characteristics with an 8ns turn-on delay.
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Infineon IPD60R3K3C6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 3.3R |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.41mm |
| Input Capacitance | 93pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 18.1W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 3.3R |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 18.1W |
| Radiation Hardening | No |
| Rds On Max | 3.3R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 8ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
| RoHS | Compliant |
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