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Technical Specifications
Infineon IPD60R450E6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 9.2A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 410mR |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 620pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 74W |
| Number of Channels | 1 |
| On-State Resistance | 450mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 74W |
| Radiation Hardening | No |
| Rds On Max | 450mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ E6 |
| Turn-Off Delay Time | 70ns |
| Turn-On Delay Time | 11ns |
| Weight | 3.949996g |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R450E6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R450E6ATMA1 to view detailed technical specifications.
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