N-Channel Power MOSFET, 600V drain-source breakdown voltage, 8.1A continuous drain current, and 520mΩ Rds(on). This silicon Metal-Oxide-Semiconductor FET features a TO-252 package, 66W power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 14ns fall time, 85ns turn-off delay, and 13ns turn-on delay, with an input capacitance of 512pF. RoHS compliant and packaged on tape and reel.
PackageTO-252-3
PolarityN-CHANNEL
Power66W
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Technical Specifications
Infineon IPD60R520C6 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.1A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
520mR
Drain to Source Voltage (Vdss)
600V
Fall Time
14ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
512pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
66W
Nominal Vgs
3V
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
66W
Radiation Hardening
No
Rds On Max
520mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
OptiMOS™
Threshold Voltage
3V
Turn-Off Delay Time
85ns
Turn-On Delay Time
13ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD60R520C6 Datasheet
Download the complete datasheet for Infineon IPD60R520C6 to view detailed technical specifications.
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