N-Channel Power MOSFET, 600V drain-source breakdown voltage, 8.1A continuous drain current, and 520mΩ Rds(on). This silicon Metal-Oxide-Semiconductor FET features a TO-252 package, 66W power dissipation, and operates within a -55°C to 150°C temperature range. Key switching characteristics include a 14ns fall time, 85ns turn-off delay, and 13ns turn-on delay, with an input capacitance of 512pF. RoHS compliant and packaged on tape and reel.
PackageTO-252-3
PolarityN-CHANNEL
Power66W
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Technical Specifications
Infineon IPD60R520C6 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 8.1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 520mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 14ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 512pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Nominal Vgs | 3V |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 66W |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 85ns |
| Turn-On Delay Time | 13ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R520C6 Datasheet
Download the complete datasheet for Infineon IPD60R520C6 to view detailed technical specifications.
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