The IPD60R520CPBTMA1 is a 600V N-Channel MOSFET from Infineon with a maximum continuous drain current of 6.8A and a maximum operating temperature of 150°C. It features a TO-252-3 package and is suitable for surface mount applications. The device has an input capacitance of 630pF and a maximum power dissipation of 66W. It is not radiation hardened and is not RoHS compliant.
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD60R520CPBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.8A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 16ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 630pF |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 66W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 520mR |
| RoHS Compliant | No |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 74ns |
| Turn-On Delay Time | 17ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Infineon IPD60R520CPBTMA1 Datasheet
Download the complete datasheet for Infineon IPD60R520CPBTMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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