N-Channel Power MOSFET, 600V breakdown voltage, 7.3A continuous drain current, and 600mΩ on-state resistance. Features a TO-252 package, 13ns fall time, 12ns turn-on delay, and 80ns turn-off delay. Operates from -55°C to 150°C with a maximum power dissipation of 63W. This silicon, metal-oxide semiconductor FET is RoHS compliant and lead-free.
PackageTO-252-3
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD60R600C6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 540mR |
| Fall Time | 13ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 440pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Nominal Vgs | 3V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 600mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R600C6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R600C6ATMA1 to view detailed technical specifications.
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