The IPD60R600CPBTMA1 is a 600V N-Channel MOSFET from Infineon with a maximum operating temperature range of -55°C to 150°C. It features a continuous drain current of 6.1A and a maximum power dissipation of 60W. The device is packaged in a TO-252-3 surface mount package and is available on tape and reel. The MOSFET has an input capacitance of 550pF and a maximum Rds On of 600mΩ. It is part of the CoolMOS series and is not radiation hardened.
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Infineon IPD60R600CPBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.1A |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 550pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 75ns |
| Turn-On Delay Time | 17ns |
| RoHS | Not CompliantNo |
Download the complete datasheet for Infineon IPD60R600CPBTMA1 to view detailed technical specifications.
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