The IPD60R600E6ATMA1 is a high-power N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 650V and a continuous drain current of 7.3A. The device has a maximum power dissipation of 63W and an on-state resistance of 600mR. It is packaged in a TO-252-3 plastic package and is RoHS compliant.
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Infineon IPD60R600E6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 540mR |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 440pF |
| Length | 6.73mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| On-State Resistance | 600mR |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ E6 |
| Turn-Off Delay Time | 58ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
| RoHS | Compliant |
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