N-Channel Power MOSFET, 600V Vds, 7.3A Continuous Drain Current, 0.6 Ohm Rds(on). Features 11ns turn-on and 33ns turn-off delay times, 557pF input capacitance, and 4V threshold voltage. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 surface mount package with a maximum power dissipation of 63W. Operates from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD60R600P6 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Resistance | 600R |
| Drain to Source Voltage (Vdss) | 600V |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 557pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS P6 |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 11ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R600P6 Datasheet
Download the complete datasheet for Infineon IPD60R600P6 to view detailed technical specifications.
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