N-Channel Power MOSFET, 600V Vds, 7.3A Continuous Drain Current, 0.6 Ohm Rds(on). Features 11ns turn-on and 33ns turn-off delay times, 557pF input capacitance, and 4V threshold voltage. This silicon, metal-oxide semiconductor FET is housed in a TO-252-3 surface mount package with a maximum power dissipation of 63W. Operates from -55°C to 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD60R600P6 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.3A
Drain to Source Resistance
600R
Drain to Source Voltage (Vdss)
600V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
2.41mm
Input Capacitance
557pF
Lead Free
Contains Lead
Length
6.73mm
Max Dual Supply Voltage
600V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
63W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
CoolMOS P6
Threshold Voltage
4V
Turn-Off Delay Time
33ns
Turn-On Delay Time
11ns
Weight
0.139332oz
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD60R600P6 Datasheet
Download the complete datasheet for Infineon IPD60R600P6 to view detailed technical specifications.
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