N-channel Power MOSFET, 600V Vds, 5.7A continuous drain current, and 750mΩ Rds(on) at 10V Vgs. Features 650V breakdown voltage, 3V threshold voltage, and 48W power dissipation. This surface-mount device in a TO-252 package offers fast switching with 9ns turn-on delay and 12ns fall time. Input capacitance is 373pF, with a maximum operating temperature of 150°C.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power48W
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Technical Specifications
Infineon IPD60R750E6ATMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 680mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 12ns |
| FET Type | 1 N-Channel |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 373pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 48W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 750mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 48W |
| Rds On Max | 750mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ E6 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 9ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R750E6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R750E6ATMA1 to view detailed technical specifications.
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