N-channel Power MOSFET featuring CoolMOS C6 technology, designed for 600V drain-source voltage and 4.4A continuous drain current. This single-element transistor is housed in a surface-mount DPAK (TO-252AA) package with gull-wing leads, offering a maximum power dissipation of 37W. Key electrical characteristics include a 950mOhm drain-source on-resistance at 10V and a typical gate charge of 13nC. Operating temperature range spans from -55°C to 150°C.
PackageDPAK
MountingSurface Mount
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Technical Specifications
Infineon IPD60R950C6 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
TO-252
Package/Case
DPAK
Package Description
Deca Watt Package
Lead Shape
Gull-wing
Pin Count
3
PCB
2
Tab
Tab
Package Length (mm)
6.73(Max)
Package Width (mm)
6.22(Max)
Package Height (mm)
2.41(Max)
Seated Plane Height (mm)
2.56(Max)
Pin Pitch (mm)
2.29
Mounting
Surface Mount
Jedec
TO-252AA
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
CoolMOS C6
Maximum Drain Source Voltage
600V
Maximum Gate Source Voltage
20V
Maximum Continuous Drain Current
4.4A
Maximum Gate Threshold Voltage
3.5V
Maximum Drain Source Resistance
950@10VmOhm
Typical Gate Charge @ Vgs
13@10VnC
Typical Gate Charge @ 10V
13nC
Typical Input Capacitance @ Vds
280@100VpF
Maximum Power Dissipation
37000mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Compliance
Cage Code
CG091
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Infineon IPD60R950C6 Datasheet
Download the complete datasheet for Infineon IPD60R950C6 to view detailed technical specifications.
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