N-channel power MOSFET featuring 600V drain-source breakdown voltage and 4.4A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 950mΩ on-state resistance and a 3V threshold voltage. Designed for efficient switching, it exhibits a 10ns turn-on delay and 60ns turn-off delay, with a 13ns fall time. Packaged in a TO-252-3 plastic package, this RoHS compliant component operates from -55°C to 150°C with a maximum power dissipation of 37W.
PackageTO-252-3
PolarityN-CHANNEL
Power37W
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Technical Specifications
Infineon IPD60R950C6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 4.4A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 2.41mm |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Dual Supply Voltage | 600V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Number of Channels | 1 |
| On-State Resistance | 950mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 37W |
| Radiation Hardening | No |
| Rds On Max | 950mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 60ns |
| Turn-On Delay Time | 10ns |
| Weight | 0.139332oz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD60R950C6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD60R950C6ATMA1 to view detailed technical specifications.
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