Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN
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Infineon IPD64CN10NG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 17A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 64mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 2ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 569pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 44W |
| Rds On Max | 64mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 9ns |
| RoHS | Compliant |
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