IPD64CN10NG

Power Field-Effect Transistor, 17A I(D), 100V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN

PackageTO-252-3

MountingSurface Mount

PolarityN-CHANNEL

Power44W

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Infineon IPD64CN10NG technical specifications.

Package/Case	TO-252-3
Continuous Drain Current (ID)	17A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	64mR
Drain to Source Voltage (Vdss)	100V
Fall Time	2ns
Gate to Source Voltage (Vgs)	20V
Input Capacitance	569pF
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	44W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	44W
Rds On Max	64mR
RoHS Compliant	Yes
Series	OptiMOS™
Turn-Off Delay Time	9ns

RoHS

Compliant

This datasheet cannot be embedded due to technical restrictions.