N-channel MOSFET transistor featuring 650V drain-source voltage and 3.2A continuous drain current. Offers 1.4 Ohm on-state resistance and 28W power dissipation. Designed for surface mounting in a TO-252-3 package, this unipolar transistor operates within a -55°C to 150°C temperature range. Includes fast switching characteristics with turn-on delay of 7.7ns and fall time of 18.2ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power28W
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Technical Specifications
Infineon IPD65R1K4C6ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.2A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 18.2ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Halogen Free |
| Input Capacitance | 225pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 28W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| On-State Resistance | 1.4R |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 28W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C6 |
| Turn-Off Delay Time | 33ns |
| Turn-On Delay Time | 7.7ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R1K4C6ATMA1 Datasheet
Download the complete datasheet for Infineon IPD65R1K4C6ATMA1 to view detailed technical specifications.
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