The IPD65R225C7ATMA1 is a 650V surface mount MOSFET from Infineon with a maximum continuous drain current of 11A. It features a TO-252-3 package and is suitable for high-power applications. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The MOSFET has a maximum power dissipation of 63W and a maximum Rds on resistance of 225mΩ.
PackageTO-252-3
MountingSurface Mount
Power63W
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Technical Specifications
Infineon IPD65R225C7ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 11A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 996pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Rds On Max | 225mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ C7 |
| Turn-Off Delay Time | 48ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R225C7ATMA1 Datasheet
Download the complete datasheet for Infineon IPD65R225C7ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.