Infineon
IPD65R250E6XTMA1
Power Field-Effect Transistor, 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC, DPAK-3
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power208W
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Technical Specifications
Infineon IPD65R250E6XTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
16.1A
Drain to Source Resistance
250mR
Drain to Source Voltage (Vdss)
650V
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
950pF
Lead Free
Lead Free
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
208W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
208W
Rds On Max
250mR
RoHS Compliant
Yes
Series
CoolMOS™ E6
Turn-Off Delay Time
76ns
Turn-On Delay Time
11ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD65R250E6XTMA1 Datasheet
Download the complete datasheet for Infineon IPD65R250E6XTMA1 to view detailed technical specifications.
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