The IPD65R380E6ATMA1 is a high-power N-channel MOSFET from Infineon, featuring a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 10.6A and a drain to source breakdown voltage of 700V. The device is packaged in a TO-252-3 package and is RoHS compliant. It has an on-state resistance of 380mR and a maximum power dissipation of 83W.
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Infineon IPD65R380E6ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 10.6A |
| Drain to Source Breakdown Voltage | 700V |
| Drain to Source Resistance | 380mR |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 710pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| On-State Resistance | 380mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 380mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 57ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD65R380E6ATMA1 to view detailed technical specifications.
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