Infineon
IPD65R420CFDAATMA1
Power Field-Effect Transistor, 8.7A I(D), 650V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Infineon IPD65R420CFDAATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
8.7A
Drain to Source Voltage (Vdss)
650V
Halogen Free
Halogen Free
Input Capacitance
870pF
Lead Free
Contains Lead
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-40°C
Max Power Dissipation
83.3W
Mount
Surface Mount
Rds On Max
420mR
RoHS Compliant
Yes
Series
Automotive, AEC-Q101, CoolMOS™
Compliance
RoHS
Compliant
Datasheet
Infineon IPD65R420CFDAATMA1 Datasheet
Download the complete datasheet for Infineon IPD65R420CFDAATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.