The IPD65R420CFDBTMA1 is a high-voltage N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 650V and a continuous drain current of 8.7A. The device is packaged in a TO-252-3 package and is RoHS compliant. The MOSFET has a maximum power dissipation of 83.3W and a gate to source voltage of 20V.
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Infineon IPD65R420CFDBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 8.7A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 870pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83.3W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83.3W |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 38ns |
| Turn-On Delay Time | 10ns |
| RoHS | Compliant |
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