Infineon
IPD65R600C6
Power Field-Effect Transistor, 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3
PackageTO-252-3
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Technical Specifications
Infineon IPD65R600C6 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
7.3A
Drain to Source Voltage (Vdss)
650V
Fall Time
13ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
440pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Package Quantity
1
Packaging
Tape and Reel
Rds On Max
600mR
RoHS Compliant
Yes
Series
OptiMOS™
Turn-Off Delay Time
80ns
Turn-On Delay Time
12ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD65R600C6 Datasheet
Download the complete datasheet for Infineon IPD65R600C6 to view detailed technical specifications.
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