The IPD65R600C6 is a 650V MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 7.3A and a maximum power dissipation of 63W. The device is packaged in a TO-252-3 package and is RoHS compliant. It features a fall time of 13ns, a turn-off delay time of 80ns, and a turn-on delay time of 12ns.
PackageTO-252-3
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Technical Specifications
Infineon IPD65R600C6 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 440pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 12ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R600C6 Datasheet
Download the complete datasheet for Infineon IPD65R600C6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.