N-channel silicon power MOSFET featuring 650V drain-source voltage and 600mΩ Rds(on). This surface-mount transistor offers a continuous drain current of 7.3A and a maximum power dissipation of 63W. Key switching characteristics include a 10ns turn-on delay and 11ns fall time. Housed in a TO-252 package, it operates within a temperature range of -55°C to 150°C.
PackageTO-252
MountingSurface Mount
Power63W
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Technical Specifications
Infineon IPD65R600E6 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 7.3A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 11ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Height | 2.41mm |
| Input Capacitance | 440pF |
| Lead Free | Contains Lead |
| Length | 6.73mm |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 63W |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 64ns |
| Turn-On Delay Time | 10ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R600E6 Datasheet
Download the complete datasheet for Infineon IPD65R600E6 to view detailed technical specifications.
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