N-channel silicon power MOSFET featuring 650V drain-source voltage and 600mΩ Rds(on). This surface-mount transistor offers a continuous drain current of 7.3A and a maximum power dissipation of 63W. Key switching characteristics include a 10ns turn-on delay and 11ns fall time. Housed in a TO-252 package, it operates within a temperature range of -55°C to 150°C.
PackageTO-252
MountingSurface Mount
Power63W
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Technical Specifications
Infineon IPD65R600E6 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
7.3A
Drain to Source Voltage (Vdss)
650V
Fall Time
11ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Height
2.41mm
Input Capacitance
440pF
Lead Free
Contains Lead
Length
6.73mm
Max Dual Supply Voltage
650V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Power Dissipation
63W
Rds On Max
600mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
64ns
Turn-On Delay Time
10ns
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Infineon IPD65R600E6 Datasheet
Download the complete datasheet for Infineon IPD65R600E6 to view detailed technical specifications.
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