Infineon
IPD65R650CEATMA1
Power Field-Effect Transistor, 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3/2
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Technical Specifications
Infineon IPD65R650CEATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPD65R650CEATMA1 Datasheet
Download the complete datasheet for Infineon IPD65R650CEATMA1 to view detailed technical specifications.
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