The IPD65R660CFDAATMA1 is a surface mount power MOSFET from Infineon with a maximum operating temperature range of -40°C to 150°C. It features a maximum drain to source voltage of 650V and a continuous drain current of 6A. The device has a maximum power dissipation of 62.5W and an on-state resistance of 660mΩ. It is compliant with AEC-Q101 and is packaged in a TO-252-3 package.
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Infineon IPD65R660CFDAATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 543pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -40°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| On-State Resistance | 660mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Power Dissipation | 62.5W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
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