N-channel power MOSFET featuring 650V drain-source breakdown voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 660mΩ on-state resistance and is housed in a TO-252 surface-mount package. Key performance characteristics include a 9ns turn-on delay, 10ns fall time, and 615pF input capacitance, with a maximum power dissipation of 63W. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-252
MountingSurface Mount
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD65R660CFDBTMA1 technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 615pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 660mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R660CFDBTMA1 Datasheet
Download the complete datasheet for Infineon IPD65R660CFDBTMA1 to view detailed technical specifications.
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