N-channel power MOSFET featuring 650V drain-source breakdown voltage and 6A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 660mΩ on-state resistance and is housed in a TO-252 surface-mount package. Key performance characteristics include a 9ns turn-on delay, 10ns fall time, and 615pF input capacitance, with a maximum power dissipation of 63W. Designed for demanding applications, it operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD65R660CFDBTMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD65R660CFDBTMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 6A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 660mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 615pF |
| Lead Free | Lead Free |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 62.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| On-State Resistance | 660mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 660mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD65R660CFDBTMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
