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Technical Specifications
Infineon IPD65R950CFDBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 13.8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 380pF |
| Max Dual Supply Voltage | 650V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 36.7W |
| Mount | Surface Mount |
| On-State Resistance | 950mR |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 36.7W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 43ns |
| Turn-On Delay Time | 9ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD65R950CFDBTMA1 Datasheet
Download the complete datasheet for Infineon IPD65R950CFDBTMA1 to view detailed technical specifications.
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