N-channel power MOSFET in a TO-252 package, featuring 40V drain-source breakdown voltage and 82A continuous drain current. This silicon metal-oxide semiconductor FET offers a low 6mΩ Rds On resistance and 79W power dissipation. Designed for high-efficiency switching, it boasts fast switching times with a 7ns fall time and 13ns turn-on delay. Operating from -55°C to 175°C, this RoHS and Halogen Free component is supplied on tape and reel.
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Infineon IPD70N04S3-07 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 82A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 2.7nF |
| Lead Free | Lead Free |
| Length | 6.5mm |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 79W |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 79W |
| Radiation Hardening | No |
| Rds On Max | 6mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 17ns |
| Turn-On Delay Time | 13ns |
| Width | 6.22mm |
| RoHS | Compliant |
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