N-channel power MOSFET featuring 100V drain-source breakdown voltage and 70A continuous drain current. Offers low on-state resistance of 11.1mR at a 10V gate-source voltage. This silicon metal-oxide semiconductor FET is housed in a TO-252 package, supporting a maximum power dissipation of 125W and operating temperature range of -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 17ns and fall time of 8ns.
PackageTO-252-3
PolarityN-CHANNEL
Power125W
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Technical Specifications
Infineon IPD70N10S312ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 11.1mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 4.355nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| On-State Resistance | 11.1mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 125W |
| Rds On Max | 11.1mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 17ns |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD70N10S312ATMA1 Datasheet
Download the complete datasheet for Infineon IPD70N10S312ATMA1 to view detailed technical specifications.
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