N-channel power MOSFET featuring 100V drain-source voltage and 70A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low on-state resistance of 11.5mΩ and a maximum power dissipation of 125W. Designed for efficient switching, it exhibits a fall time of 7ns and turn-on delay of 12ns. Packaged in a TO-252-3 plastic package, this component operates within a temperature range of -55°C to 175°C and is RoHS compliant.
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Infineon IPD70N10S3L12ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Height | 2.3mm |
| Input Capacitance | 5.55nF |
| Lead Free | Contains Lead |
| Length | 6.5mm |
| Max Dual Supply Voltage | 100V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| On-State Resistance | 11.5mR |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 11.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Width | 6.22mm |
| RoHS | Compliant |
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