P-channel MOSFET for power applications, featuring a low Rds(on) of 8.9mΩ at a drain current of 73A and a drain-source voltage of -40V. This silicon, metal-oxide semiconductor FET offers fast switching with turn-on delay of 19ns and fall time of 31ns. Designed for surface mounting in a TO-252 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 75W. RoHS compliant and AEC-Q101 qualified, this component is suitable for automotive and demanding electronic systems.
PackageTO-252-3
MountingSurface Mount
Quick Jump:
Technical Specifications
Infineon IPD70P04P409ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.81nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 8.9mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 19ns |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD70P04P409ATMA1 Datasheet
Download the complete datasheet for Infineon IPD70P04P409ATMA1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
