P-channel MOSFET for power applications, featuring a low Rds(on) of 8.9mΩ at a drain current of 73A and a drain-source voltage of -40V. This silicon, metal-oxide semiconductor FET offers fast switching with turn-on delay of 19ns and fall time of 31ns. Designed for surface mounting in a TO-252 package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 75W. RoHS compliant and AEC-Q101 qualified, this component is suitable for automotive and demanding electronic systems.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD70P04P409ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD70P04P409ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 73A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 31ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 4.81nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 8.9mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 19ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD70P04P409ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
