The IPD70P04P4L08ATMA1 is a 70A 16V N-Channel MOSFET from Infineon, packaged in a TO-252-3 surface mount package. It operates over a temperature range of -55 to 175°C and is compliant with AEC-Q101. The device has a maximum power dissipation of 75W and a maximum drain to source voltage of -40V. It features a low Rds On max of 7.8mR and a fast switching time with a fall time of 41ns and turn-off delay time of 50ns.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD70P04P4L08ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD70P04P4L08ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 70A |
| Drain to Source Voltage (Vdss) | -40V |
| Fall Time | 41ns |
| Gate to Source Voltage (Vgs) | 16V |
| Halogen Free | Halogen Free |
| Input Capacitance | 5.43nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | -40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Rds On Max | 7.8mR |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101, OptiMOS™ |
| Turn-Off Delay Time | 50ns |
| Turn-On Delay Time | 12ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD70P04P4L08ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
