N-channel power MOSFET featuring 700V breakdown voltage and 1.4 ohm on-resistance. This single-element, silicon, metal-oxide semiconductor field-effect transistor is housed in a TO-252 DPAK-3/2 package. It operates reliably within a temperature range of -40°C to 150°C.
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Technical Specifications
Infineon IPD70R1K4CEAUMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -40 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252 |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | Compliant |
| Military Spec | False |
Datasheet
Infineon IPD70R1K4CEAUMA1 Datasheet
Download the complete datasheet for Infineon IPD70R1K4CEAUMA1 to view detailed technical specifications.
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