The IPD78CN10NGATMA1 is a 100V N-Channel MOSFET with a continuous drain current of 13A. It features a TO-252-3 package and is designed for surface mount applications. The device operates over a temperature range of -55°C to 175°C and has a maximum power dissipation of 31W. It is RoHS compliant and part of the OptiMOS series.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD78CN10NGATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD78CN10NGATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 3ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 716pF |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 31W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 31W |
| Rds On Max | 78mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 9ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD78CN10NGATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
