N-CHANNEL Power MOSFET, OptiMOS™ series, featuring 60V Drain to Source Breakdown Voltage and 16A Continuous Drain Current. This TO-252-3 packaged transistor offers a low 80mΩ Rds On Max, with fast switching speeds including 7ns turn-on delay and 27ns fall time. Maximum power dissipation is rated at 47W, operating across a temperature range of -55°C to 175°C. RoHS compliant and lead-free.
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Infineon IPD800N06NG technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 370pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 47W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 47W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 22ns |
| Turn-On Delay Time | 7ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
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