N-Channel Power MOSFET, 40V Vds, 90A continuous drain current, and 5.2mΩ Rds On. This silicon, metal-oxide semiconductor FET features a TO-252 package, 100W power dissipation, and operates from -55°C to 175°C. Includes fast switching characteristics with turn-on delay of 15ns and fall time of 10ns. Halogen-free and RoHS compliant.
PackageTO-252-3
PolarityN-CHANNEL
Power100W
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Technical Specifications
Infineon IPD80N04S306ATMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Voltage (Vdss) | 40V |
| Fall Time | 10ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 3.25nF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 40V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 100W |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 100W |
| Rds On Max | 5.2mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 15ns |
| Weight | 3.949996g |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD80N04S306ATMA1 Datasheet
Download the complete datasheet for Infineon IPD80N04S306ATMA1 to view detailed technical specifications.
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