P-channel power MOSFET featuring 30V drain-source breakdown voltage and 80A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 6.8mΩ drain-source resistance (Rds On Max) and 88W maximum power dissipation. Designed for high-efficiency switching applications, it operates across a wide temperature range from -55°C to 175°C and is packaged in a halogen-free, green TO-252 plastic package.
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Infineon IPD80P03P4L07ATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.8mR |
| Drain to Source Voltage (Vdss) | -30V |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 5V |
| Halogen Free | Halogen Free |
| Height | 2.5mm |
| Input Capacitance | 5.7nF |
| Max Dual Supply Voltage | -30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 88W |
| Rds On Max | 6.8mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 15ns |
| Turn-On Delay Time | 8ns |
| RoHS | Compliant |
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