N-channel Power MOSFET, 800V Vdss, 5.7A continuous drain current, and 0.95ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252 DPAK-3/2 surface mount package, 83W power dissipation, and operates from -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay, 8ns fall time, and 72ns turn-off delay.
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Infineon IPD80R1K0CEBTMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 5.7A |
| Drain to Source Resistance | 950mR |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 8ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 785pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 83W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 83W |
| Rds On Max | 950mR |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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