N-channel Power MOSFET, 800V Vdss, 5.7A continuous drain current, and 0.95ohm Rds On. This silicon Metal-oxide Semiconductor FET features a TO-252 DPAK-3/2 surface mount package, 83W power dissipation, and operates from -55°C to 150°C. Key switching characteristics include a 25ns turn-on delay, 8ns fall time, and 72ns turn-off delay.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power83W
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Technical Specifications
Infineon IPD80R1K0CEBTMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
5.7A
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
800V
Fall Time
8ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Not Halogen Free
Input Capacitance
785pF
Lead Free
Contains Lead
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
83W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
83W
Rds On Max
950mR
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Weight
0.139332oz
Compliance
RoHS
Compliant
Datasheet
Infineon IPD80R1K0CEBTMA1 Datasheet
Download the complete datasheet for Infineon IPD80R1K0CEBTMA1 to view detailed technical specifications.
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