N-channel MOSFET transistor featuring 800V drain-source voltage and 1.4 Ohm on-state resistance. This surface mount component offers a continuous drain current of 3.9A and a maximum power dissipation of 63W. Designed for efficient switching, it exhibits a fall time of 12ns and turn-on delay time of 25ns. Packaged in TO-252-3, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
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Infineon IPD80R1K4CEATMA1 technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.9A |
| Drain to Source Resistance | 1.4R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Halogen Free | Halogen Free |
| Input Capacitance | 570pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 63W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Number of Elements | 1 |
| On-State Resistance | 1.4R |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 63W |
| Rds On Max | 1.4R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.139332oz |
| RoHS | Compliant |
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