N-channel MOSFET transistor featuring 800V drain-source voltage and 1.4 Ohm on-state resistance. This surface mount component offers a continuous drain current of 3.9A and a maximum power dissipation of 63W. Designed for efficient switching, it exhibits a fall time of 12ns and turn-on delay time of 25ns. Packaged in TO-252-3, it operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power63W
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Technical Specifications
Infineon IPD80R1K4CEATMA1 technical specifications.
General
Package/Case
TO-252-3
Continuous Drain Current (ID)
3.9A
Drain to Source Resistance
1.4R
Drain to Source Voltage (Vdss)
800V
Fall Time
12ns
Gate to Source Voltage (Vgs)
20V
Halogen Free
Halogen Free
Input Capacitance
570pF
Lead Free
Contains Lead
Max Dual Supply Voltage
800V
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
63W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
On-State Resistance
1.4R
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
63W
Rds On Max
1.4R
RoHS Compliant
Yes
Series
CoolMOS™
Turn-Off Delay Time
72ns
Turn-On Delay Time
25ns
Weight
0.139332oz
Compliance
RoHS
Compliant
Datasheet
Infineon IPD80R1K4CEATMA1 Datasheet
Download the complete datasheet for Infineon IPD80R1K4CEATMA1 to view detailed technical specifications.
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