N-channel power MOSFET for surface mount applications, featuring 800V drain-source voltage and 1.9A continuous drain current. Offers 2.8 Ohm drain-to-source resistance and 42W maximum power dissipation. Designed with a TO-252-3 package, it includes fast switching characteristics with turn-on delay of 25ns and fall time of 18ns. Maximum operating temperature reaches 150°C.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Infineon IPD80R2K8CEBTMA1 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Resistance | 2.8R |
| Drain to Source Voltage (Vdss) | 800V |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Halogen Free | Not Halogen Free |
| Input Capacitance | 290pF |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 800V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 42W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Rds On Max | 2.8R |
| RoHS Compliant | Yes |
| Series | CoolMOS™ |
| Turn-Off Delay Time | 72ns |
| Turn-On Delay Time | 25ns |
| Weight | 0.139332oz |
Compliance
| RoHS | Compliant |
Datasheet
Infineon IPD80R2K8CEBTMA1 Datasheet
Download the complete datasheet for Infineon IPD80R2K8CEBTMA1 to view detailed technical specifications.
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