IPD80R3K3P7ATMA1

Power Field-Effect Transistor, 800V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252, DPAK-3/2

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Infineon IPD80R3K3P7ATMA1 technical specifications.

Number of Terminals

Min Operating Temperature

-55

Terminal Position

SINGLE

JEDEC Package Code

TO-252AA

Number of Elements

RoHS

Yes

Eccn Code

EAR99

REACH

Compliant

Military Spec

False

This datasheet cannot be embedded due to technical restrictions.