IPD80R450P7

This 800 V N-channel superjunction MOSFET is designed for flyback SMPS, PFC stages, solar, adapter, audio, and lighting applications. It supports 11 A continuous drain current, 29 A pulsed drain current, and a maximum drain-source on-resistance of 450 mΩ at 10 V gate drive. The device is offered in a 3-pin DPAK surface-mount package with up to 73 W power dissipation and thermal resistance as low as 1.7 K/W junction-to-case. It operates across a junction temperature range of -55 °C to 150 °C and has a typical total gate charge of 24 nC with 9 nC gate-drain charge. The design includes an integrated gate resistor and emphasizes low stored COSS energy, robust gate behavior, and fast, clean switching.