N-channel silicon power MOSFET featuring 800V drain-source voltage and 0.45 ohm on-resistance. This single-element, 2-terminal device utilizes a Metal-oxide Semiconductor Field-Effect Transistor (MOSFET) architecture. Packaged in a TO-252AA (DPAK-3/2) JEDEC standard package, it operates across a temperature range from -55°C.
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Technical Specifications
Infineon IPD80R450P7ATMA1 technical specifications.
General
| Number of Terminals | 2 |
| Min Operating Temperature | -55 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-252AA |
| Number of Elements | 1 |
Compliance
| RoHS | Yes |
| Eccn Code | EAR99 |
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Infineon IPD80R450P7ATMA1 Datasheet
Download the complete datasheet for Infineon IPD80R450P7ATMA1 to view detailed technical specifications.
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