The IPD90N03S4L02ATMA1 is a 90A 30V N-Channel MOSFET packaged in a TO-252 surface mount package. It has a maximum operating temperature range of -55°C to 175°C and is RoHS compliant. The device has a power dissipation of 136W and a maximum dual supply voltage of 30V. The MOSFET has a continuous drain current of 90A and a drain to source voltage of 30V.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Infineon IPD90N03S4L02ATMA1 datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Infineon IPD90N03S4L02ATMA1 technical specifications.
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 90A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 13ns |
| Halogen Free | Halogen Free |
| Lead Free | Contains Lead |
| Max Dual Supply Voltage | 30V |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 136W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 62ns |
| Turn-On Delay Time | 14ns |
| RoHS | Compliant |
Download the complete datasheet for Infineon IPD90N03S4L02ATMA1 to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
