Infineon
IPD90N03S4L02ATMA1
Power Field-Effect Transistor, 90A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
PackageTO-252
MountingSurface Mount
Power136W
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Technical Specifications
Infineon IPD90N03S4L02ATMA1 technical specifications.
General
Package/Case
TO-252
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
30V
Fall Time
13ns
Halogen Free
Halogen Free
Lead Free
Contains Lead
Max Dual Supply Voltage
30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
Number of Elements
1
Packaging
Tape and Reel
Power Dissipation
136W
Radiation Hardening
No
RoHS Compliant
Yes
Turn-Off Delay Time
62ns
Turn-On Delay Time
14ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N03S4L02ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N03S4L02ATMA1 to view detailed technical specifications.
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