Infineon
IPD90N03S4L03ATMA1
Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, GREEN, PLASTIC PACKAGE-3/2
MountingSurface Mount
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Technical Specifications
Infineon IPD90N03S4L03ATMA1 technical specifications.
General
Continuous Drain Current (ID)
90A
Drain to Source Voltage (Vdss)
30V
Fall Time
7ns
Gate to Source Voltage (Vgs)
16V
Halogen Free
Halogen Free
Lead Free
Contains Lead
Max Dual Supply Voltage
30V
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Mount
Surface Mount
RoHS Compliant
Yes
Turn-Off Delay Time
37ns
Turn-On Delay Time
9ns
Compliance
RoHS
Compliant
Datasheet
Infineon IPD90N03S4L03ATMA1 Datasheet
Download the complete datasheet for Infineon IPD90N03S4L03ATMA1 to view detailed technical specifications.
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